RT Journal Article
T1 Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Domínguez-Adame Acosta, Francisco
A1 De Diego, N.
AB Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution  of defects in GaAs: Te wafers. Dislocation  density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration  has been detected in the Te-doped samples relative  to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
PB Amer Inst Physics
SN 0021-8979
YR 1988
FD 1988-11-01
LK https://hdl.handle.net/20.500.14352/59001
UL https://hdl.handle.net/20.500.14352/59001
LA eng
NO © 1988 Amer Inst Physics.The authors thank Wacker-Chemitronic (Dr K. Löhnert) for providing the samples. The help of Dr. J. Llopis during this work is acknowledged. This work was partially supported by Comisión Interministerial de Ciencia y Tecnología (Project No. PB86-0151).
NO Comisión Interministerial de Ciencia y Tecnología
DS Docta Complutense
RD 14 dic 2025