TY  - JOUR
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Domínguez-Adame Acosta, Francisco
AU  - De Diego, N.
PY  - 1988
DO  - 10.1063/1.341269
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59001
T2  - Journal of Applied Physics
AB  - Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution  of defects in GaAs: Te wafers. Dislocation  density and near-band-edge CL profiles along the wafer have...
LA  - eng
M2  - 4466
PB  - Amer Inst Physics
KW  - Physics
KW  - Applied
TI  - Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
TY  - journal article
VL  - 64
ER  -