RT Journal Article
T1 Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
AB We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics.
PB American Institute of Physics
SN 0021-8979
YR 2003
FD 2003-06-01
LK https://hdl.handle.net/20.500.14352/51135
UL https://hdl.handle.net/20.500.14352/51135
LA eng
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NO © 2003 American Institute of Physics. The authors wish to thank Professor J. Jiménez for his useful comments on the manuscript. This work was partially supported by DGICYT Grant No. PB97-1254 and by CICYT Grant No. TIC-98/0740. One of the authors (S. H.) acknowledges support from Departament d’Universitats i Recerca de la Generalitat de Catalunya.
NO DGICYT
NO CICYT
DS Docta Complutense
RD 4 may 2024