TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2003
DO  - 10.1063/1.1565175
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51135
T2  - Journal of Applied Physics
AB  - We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal...
LA  - eng
M2  - 9019
PB  - American Institute of Physics
KW  - Raman-Scattering
KW  - Implantation Damage
KW  - Ion-Implantation
KW  - In(1-x)GaxAsyP(1-y)
KW  - InP
KW  - Si
KW  - In(0.53)Ga(0.47)As
KW  - Behavior
KW  - Alloys
KW  - Modes.
TI  - Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing
TY  - journal article
VL  - 93
ER  -