TY  - JOUR
AU  - Miranda Pantoja, José Miguel
AU  - Sebastián Franco, José Luis
PY  - 1997
DO  - 10.1109/55.585347
SN  - 0741-3106
UR  - https://hdl.handle.net/20.500.14352/58953
T2  - IEEE Electron Device Letters
AB  - A calculation of the electron velocity in heavily doped GaAs has been performed. A model to account for the LO phonon-plasmon coupling effects is proposed in a full Monte Carlo simulator; we believe this is the first time this fact has been tried out,...
LA  - eng
M2  - 258
PB  - IEEE- Inst. Electrical Electronics Engineers Inc
KW  - Technologically Significant Semiconductors
KW  - Deformation Potentials
KW  - Zincblende Structures
KW  - Transport
KW  - Scattering
KW  - Diamond.
TI  - Monte Carlo simulation of electron velocity in degenerate GaAs
TY  - journal article
VL  - 18
ER  -