RT Journal Article
T1 Structural and optical properties of Si-doped GaN
A1 Cremades Rodríguez, Ana Isabel
A1 Gorgens, L.
A1 Ambacher, O.
A1 Stutzmann, M.
A1 Scholz, F.
AB Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress induced near band gap luminescence shift is estimated to 19^+_-2 meV/GPa. An increasing concentration of dopant impurities in the films leads to asymmetries of the XRD and photoluminescence spectra, which are probably related to a Stress induced inhomogeneous distribution of dopants. Atomic force microscopy observations of surface modulation with increasing silicon doping support this latter statement. Transmission and photothermal deflection spectroscopy measurements are used to determine the band gap energy and Urbach energy of highly doped samples.
PB American Physical Society
SN 1098-0121
YR 2000
FD 2000-01-15
LK https://hdl.handle.net/20.500.14352/58823
UL https://hdl.handle.net/20.500.14352/58823
LA eng
NO 1. P. Hacke, A. Maekawa, N. Koide, K. Hiramatsu, and N. Sawaki, Jpn. J. Appl. Phys., Part 1 33, 6443 (1994).2. W. Götz, N.M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, Appl. Phys. Lett. 68, 3144 (1996).3. L.B. Rowland, K. Doverspike, and D.K. Gaskill, Appl. Phys. Lett. 66, 1495 (1995).4. S. Ruvimov, Z. Liliental-Weber, T. Suski, J.W. Ager III, J. Wasburn, J. Krueger, C. Kiselowski, E.R. Weber, H. Amano, and I. Akasaki, Appl. Phys. Lett. 69, 990 (1996).5. M. Herrera Zaldı´var, P. Ferna´ndez, and J. Piqueras, J. Appl. Phys. 83, 462 (19989.6. E. Oh, H. Park, and Y. Park, Appl. Phys. Lett. 72, 1848 (1998).7. X. Zhang, S.-J. Chuas, W. Liu, and K.-B. Chong, Appl. Phys. Lett. 72, 1890 (1998).8. E.F. Schubert, I.D. Goepfert, W. Grieshaber, and J.M. Redwing, Appl. Phys. Lett. 71, 921 (1997).9. I.-H. Lee, I.-H. Choi, C.R. Lee, and S.K. Noh, Appl. Phys. Lett. 71, 1359 (1997).10. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T.D. Moustakas, J. Appl. Phys. 76, 4909 (1994).11. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996).12. A.C. Boccara, D. Fournier, W.B. Jackson, and N.M. Amer, Opt. Lett. 5, 377 (1980).13. W.B. Jackson, N.M. Amer, A.C. Boccara, and D. Fournier, Appl. Opt. 20, 1333 (1981).14. O. Ambacher, D. Brunner, R. Dimitrov, M. Stutzmann, F. Scholz, and A. Sohmer, Jpn. J. Appl. Phys., Part 1 37, 745 (1998).15. T. Metzger, Dissertation, Technische Universita¨t Munchen, 1997.16. C. Kisielowski, J. Kru¨ger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Lilienthal-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Phys. Rev. B 54, 17 745 (1996).17. K. Wang and R.R. Reeber, in Nitride Semiconductors, edited by E. Ma et al., MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1997).18. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T. Moustakas, J. Appl. Phys. 76, 4909 (1994).19. V.Y. Davydov, N.S. Arerkiev, I.N. Goncharuk, D.K. Nelson, I.P. Nikitina, A.S. Polkovnikov, A.N. Smirnov, M.A. Jacobson, and O.K. Semchinova, J. Appl. Phys. 82, 5097 (1997).20. B.J. Skromme, H. Zhao, D. Wang, H.S. Kong, M.T. Leonard, G.E. Bulman, and R.J. Molnar, Appl. Phys. Lett. 71, 829 (1997).21. N. Wieser (private communication).22. E. Burstein, Phys. Rev. 93, 632 (1954).23. H. Hirayama, S. Tanaka, P. Ramvall, and Y. Aoyagi, Appl. Phys. Lett. 72, 1736 (1998).24. X.-Q. Shen, S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 72, 344 (1998). 25. S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).26. I.N. Stranski and V.L. Krastanow, Akad. Wiss. Lit. Mainz Abh. Math. Naturwiss. Kl. 146, 797 (1939). 27. W. Dorsch, B. Steiner, M. Albrecht, H.P. Strunk, H. Wawra, and G. Wagner, J. Cryst. Growth 183, 305 (1998).28.  A.F. Wright, J. Appl. Phys. 82, 2835 (1997).29. W. Shan, J. Schmidt, R.J. Hauenstein, J.J. Song  and B. Goldenberg, Appl. Phys. Lett. 66, 3492 (1995).
NO ©2000 The American Physical Society.This work was supported by the Bayerische Forschungsstiftung (FOROPTO II). A.C. thanks the Spanish Ministerio de Educación y Cultura for a grant.
NO Spanish Ministerio de Educación y Cultura
NO Bayerische Forschungsstiftung (FOROPTO II)
DS Docta Complutense
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