TY  - JOUR
AU  - Cremades Rodríguez, Ana Isabel
AU  - Gorgens, L.
AU  - Ambacher, O.
AU  - Stutzmann, M.
AU  - Scholz, F.
PY  - 2000
DO  - 10.1103/PhysRevB.61.2812
SN  - 1098-0121
UR  - https://hdl.handle.net/20.500.14352/58823
T2  - Physical review B
AB  - Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection...
LA  - eng
M2  - 2812
PB  - American Physical Society
KW  - Photothermal Deflection Spectroscopy
KW  - Quantum Dots
KW  - Photoluminescence
KW  - Surfaces
KW  - Strain
KW  - Films
KW  - Luminescence
KW  - Absorption
KW  - Epitaxy
KW  - Growth
TI  - Structural and optical properties of Si-doped GaN
TY  - journal article
VL  - 61
ER  -