TY  - JOUR
AU  - Pampillón Arce, María Ángela
AU  - San Andrés Serrano, Enrique
AU  - Feijoo,, P. C.
AU  - Fierro, J. L. G.
PY  - 2017
DO  - 10.1088/1361-6641/aa58cc
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/19396
T2  - Semiconductor Science and Technology
AB  - This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were...
LA  - eng
PB  - Iop Publishing Ltd
KW  - Ray photoelectron-spectroscopy
KW  - Electrical-properties
KW  - Silicon-oxide
KW  - Dielectrics
KW  - Interface
KW  - Layer
KW  - Films
KW  - Cmos
KW  - Conductance
KW  - Generation
TI  - High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
TY  - journal article
VL  - 32
ER  -