RT Journal Article
T1 Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
A1 Monteiro, T.
A1 Pereira, E.
A1 Correia, M. R.
A1 Xavier, C.
A1 Hofmann, D. M.
A1 Meyer, B. K.
A1 Fischer, S.
A1 Cremades Rodríguez, Ana Isabel
A1 Piqueras de Noriega, Javier
AB Mid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 1.2 eV at low-temperature shifts to higher energies with increasing temperature. The presence of emission with the same characteristics in samples grown on different substrates and by different processes indicates that the defects responsible for the emission are of intrinsic nature but dependent on the cubic or hexagonal habit of the crystals. TRS are compared with cathodoluminescence (CL) in a scanning electron microscope (SEM) and optically detected magnetic resonance (ODMR) data.
PB Elsevier Science BV
SN 0022-2313
YR 1997
FD 1997-06
LK https://hdl.handle.net/20.500.14352/58852
UL https://hdl.handle.net/20.500.14352/58852
LA eng
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NO © 1997 Elsevier Science B.V. All rights reserved.International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) (1996. Praga).C. Xavier thanks JNICT for a grant BM/6613/95. This work was partially supported by JNICT Project0 no. BIC/C/CTM/1925/95.
NO JNICT
DS Docta Complutense
RD 7 may 2024