TY  - JOUR
AU  - Monteiro, T.
AU  - Pereira, E.
AU  - Correia, M. R.
AU  - Xavier, C.
AU  - Hofmann, D. M.
AU  - Meyer, B. K.
AU  - Fischer, S.
AU  - Cremades Rodríguez, Ana Isabel
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1997
DO  - 10.1016/S0022-2313(96)00328-6
SN  - 0022-2313
UR  - https://hdl.handle.net/20.500.14352/58852
T2  - Journal of Luminescence
AB  - Mid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 1.2 eV at low-temperature shifts to higher energies with increasing temperature. The presence...
LA  - eng
M2  - 696
PB  - Elsevier Science BV
KW  - GaN: Yellow Luminescence
TI  - Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
TY  - journal article
VL  - 72-4
ER  -