RT Journal Article
T1 CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Sánchez Quesada, Francisco
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Iborra, E.
AB Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of stoichiometry of films giving rise to remarkable changes in the film properties. Variation of substrate temperature causes changes in film composition because of the variation of hydrogen reactivity at the substrate. Measurements of resistivity at variable temperatures indicate a hopping conduction mechanism through gap states for films grown at low temperature (100–250 °C), the existence of three acceptor levels at about 0.046, 0.098, and 0.144 eV above valence band for films grown at intermediate temperature (250–350 °C), and a pseudometallic behavior for film grown at high temperatures (350–450 °C). Chalcopyrite polycrystalline thin films of CuInSe2 with an average grain size of 1 μm, an optical gap of 1.01 eV, and resistivities from 10− 1 to 103 Ω cm can be obtained by adding 1.5% of H2 to the sputtering atmosphere and by varying the substrate temperature from 300 to 400 °C.
PB American Institute of Physics
SN 0021-8979
YR 1987
FD 1987-11-15
LK https://hdl.handle.net/20.500.14352/59316
UL https://hdl.handle.net/20.500.14352/59316
LA eng
NO © American Institute of Physics.
DS Docta Complutense
RD 8 abr 2025