%0 Journal Article
%A Ramos Zapata, Gonzalo
%A Belenguer Dávila, Tomás
%A Monte Muñoz de la Peña, Francisco de
%A Levy, David
%A Bernabeu Martínez, Eusebio
%T A Novel Photoconductive PVK/SiO_2 Interpenetrated Network Prepared by the Sol−Gel Process
%D 2003
%@ 1520-6106
%U https://hdl.handle.net/20.500.14352/51208
%X In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials.
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