RT Journal Article
T1 A Novel Photoconductive PVK/SiO_2 Interpenetrated Network Prepared by the Sol−Gel Process
A1 Ramos Zapata, Gonzalo
A1 Belenguer Dávila, Tomás
A1 Monte Muñoz de la Peña, Francisco de
A1 Levy, David
A1 Bernabeu Martínez, Eusebio
AB In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials.
PB Amer Chemical Soc
SN 1520-6106
YR 2003
FD 2003-01-09
LK https://hdl.handle.net/20.500.14352/51208
UL https://hdl.handle.net/20.500.14352/51208
LA eng
NO © 2003 American Chemical Society.The authors are grateful to the CICYT for the research grant MAT 2001-5073-E. Gonzalo Ramos is also grateful to INTA for a Rafael Calvo Rodés fellowship.
NO Comisión Interministerial de Ciencia y Tecnología (CICYT), España
NO Instituto Nacional de Técnica Aerospacial (INTA), España
DS Docta Complutense
RD 12 abr 2025