RT Journal Article
T1 Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Hernández Rojas, J. L.
A1 Lucía Mulas, María Luisa
A1 Sánchez Quesada, Francisco
A1 Santamaría Sánchez-Barriga, Jacobo
AB CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.
PB Amer Inst Physics
SN 0003-6951
YR 1992
FD 1992-04-13
LK https://hdl.handle.net/20.500.14352/59311
UL https://hdl.handle.net/20.500.14352/59311
LA eng
NO © American Institute of Physics. The authors would like to express their acknowledgments to S. García-Martín (XRD facilities) and J. Carabe (Optical Measurement facilities).
DS Docta Complutense
RD 29 abr 2025