RT Journal Article
T1 Scanning tunneling spectroscopy of transition-metal-doped GaSb
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Dutta, P: S.
A1 Dieguez, E.
AB V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].
PB American Physical Society
SN 0163-1829
YR 1999
FD 1999-10-15
LK https://hdl.handle.net/20.500.14352/58939
UL https://hdl.handle.net/20.500.14352/58939
LA eng
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NO ©1999 The American Physical Society.This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E).
NO DGES
NO CICYT
DS Docta Complutense
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