%0 Journal Article
%A Martil De La Plaza, Ignacio
%A García Hemme, Eric
%A García Hernansanz, Rodrigo
%A González Díaz, Germán
%A Olea Ariza, Javier
%A Prado Millán, Álvaro Del
%T Low temperature intermediate band metallic behavior in Ti implanted Si
%D 2012
%@ 0040-6090
%U https://hdl.handle.net/20.500.14352/44231
%X Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10(14)-10(16) cm(-2) range. Results of the sample implanted with the 10(16) cm(-2) dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices.
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