%0 Journal Article
%A Martil De La Plaza, Ignacio
%A García Hemme, Eric
%A García Hernansanz, Rodrigo
%A González Díaz, Germán
%A Olea Ariza, Javier
%A Prado Millán, Álvaro Del
%T Double ion implantation and pulsed laser melting processes for third generation solar cells
%D 2013
%@ 1110-662x
%U https://hdl.handle.net/20.500.14352/44227
%X In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV.
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