%0 Journal Article
%A Díaz-Guerra Viejo, Carlos
%A Piqueras de Noriega, Javier
%A Golubev, VG.
%A Kurdyukov, D.A.
%A Pevtsov, A. B.
%A Zamoryanskaya, M. V.
%T Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix
%D 2002
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/59132
%X Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures.
%~