RT Journal Article
T1 Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
A1 Golubev, VG.
A1 Kurdyukov, D.A.
A1 Pevtsov, A. B.
A1 Zamoryanskaya, M. V.
AB Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures.
PB Amer Inst Physics
SN 0003-6951
YR 2002
FD 2002-11-13
LK https://hdl.handle.net/20.500.14352/59132
UL https://hdl.handle.net/20.500.14352/59132
LA eng
NO © 2000 American Institute of Physics.This work was supported by DGES (Project No. PB96-0639), the Russian R&D program ‘‘Nanostructures’’ (Grant No. 97-2016) and RFBR under Grant No. 98-02-17350.
NO DGES
NO Russian R&D program ‘‘Nanostructures’’
NO RFBR
DS Docta Complutense
RD 7 abr 2025