TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro del
PY  - 2010
DO  - 10.1063/1.3391181
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44240
T2  - Journal of Applied Physics
AB  - The influence of the silicon nitride blocking layer thickness on the interface state densities (D(it)) of HfO(2)/SiN(x):H gate-stacks on n-type silicon have been analyzed. The blocking layer consisted of 3 to 7 nm thick silicon nitride films directly...
LA  - eng
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Kappa Gate Dielectrics
KW  - Silicon-Nitride
KW  - Electrical-Properties
KW  - Thin-Films
KW  - Recombination
KW  - Transistors
KW  - Devices
KW  - Oxides
KW  - Level.
TI  - Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
TY  - journal article
VL  - 107
ER  -