TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Redondo, E.
AU  - Blanco, N.
PY  - 1999
DO  - 10.1063/1.123433
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/59284
T2  - Applied physics Letters
AB  - A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method. This...
LA  - eng
M2  - 991
PB  - Amer Inst Physics
KW  - Electrical-Properties
KW  - Vapor-Deposition
KW  - Silicon.
TI  - Low interface trap density in rapid thermally annealed Al/SiNx : H/InP metal-insulator-semiconductor devices
TY  - journal article
VL  - 74
ER  -