RT Journal Article T1 GeO_2 Nanowires Doped with Optically Active Ions A1 Hidalgo Alcalde, Pedro A1 Liberti, Emanuela A1 Rodriguez lazcano, Yamilet A1 Méndez Martín, Bianchi A1 Piqueras de Noriega, Javier AB GeO_2 nanowires doped with Eu, Er, or Mn, as well as codoped with each of these ions and Sri, have been grown by a catalyst-free vapor-solid process. The incorporation of Sri has been found, in all cases, to favor the formation of straight wires, which make them more appropriate for waveguiding purposes. Cathodoluminescence (CL.) in the scanning electron microscope (SEM) has been used to investigate the complex light emission from the nanowires. Rare earth ion emission lines and defect related bands have been observed in Eu- and Er-doped nanowires. Optical coupling and waveguiding behavior of Er-doped GeO_2 nanowires have been demonstrated for green laser light and for Er excited luminescence in the wires. In Mn-doped GeO_2 nanowires a band centered at 1.75 eV had been detected. X-ray photoemission measurements show the presence of GeO oxide in the surface of the GeO_2 wires, which influences their native defect structure. PB Amer Chemical Soc SN 1932-7447 YR 2009 FD 2009-10-01 LK https://hdl.handle.net/20.500.14352/44091 UL https://hdl.handle.net/20.500.14352/44091 LA eng NO (1) Law, M.; Sirbuly, D. J.; Johnson, J. C.; Goldberger, J.; Saykally, R.; Yang, P. D. Science 2004, 305, 1269.(2) Hidalgo, P.; Méndez, B.; Piqueras, J. Nanotechnology 2007, 18, 155203.(3) Palm, J.; Gan, F.; Zheng, B.; Michel, J.; Kimerling, L. C. Phys. ReV. B 1996, 54, 17603.(4) Priolo, F.; Franzò, G.; Pacifici, D.; Vinciguerra, V.; Iacona, F.; Irrera, A. J. Appl. Phys. 2001, 89, 264.(5) Heikenfeld, J.; Garter, M. J.; Lee, D. S.; Birkhahn, R. H.; Steckl, A. J. Appl. Phys. Lett. 1999, 75, 189.(6) Lozykowski, H. J.; Jadwisienczak, W. M.; Han, J.; Brown, I. G. Appl. Phys. Lett. 2000, 77, 767.(7) Peng, H.; Lee, C. W.; Everitt, H.; Munasinghe, C.; Lee, D. S.; Steckl, A. J. J. Appl. Phys. 2007, 102, 073520.(8) Strohhöfer, C.; Capecchi, S.; Fick, J.; Martucci, A.; Brusatin, G.; Guglielmi, M. Thin Solid Films 1998, 326, 99.(9) Wu, J.; Coffer, J. L.; Wang, Y.; Schulze, R. J. Phys. Chem. B 2009, 113, 12.(10) Nogales, E.; Méndez, B.; Piqueras, J.; Garcı´a, J. A. Nanotechnology 2009, 20, 115201.(11) Ishizumi, A.; Kanemitsu, Y. Appl. Phys. Lett. 2005, 86, 253106.(12) Wu, J.; Coffer, J. L. Chem. Mater. 2007, 19, 6266.(13) Hidalgo, P.; Me´ndez, B.; Piqueras, J. Nanotechnology 2008, 19, 455705.(14) Fitting, H. J.; Barfels, T.; Trukhin, A. N.; Schmidt, B. J. Non Cryst. Solids 2001, 259, 51.(15) Nogales, E.; Montone, A.; Cardinelli, F.; Méndez, B.; Piqueras, J. Semicond. Sci. Technol. 2002, 17, 267.(16) Kartopu, G.; Bayliss, S. C.; Hummel, R. E.; Ekinci, Y. J. Appl. Phys. 2004, 95, 3466.(17) Oku, T.; Nakayama, T.; Kuno, M.; Nozue, Y.; Wallenberg, L R.; Niihara, K.; Suganuma, K. Mater. Sci. Eng. B. 2000, 74, 242.(18) Singha, A.; Roy, A.; Kabiraj, D.; Kanjilal, D. Semicond. Sci.Technol. 2006, 21, 1691.(19) Dierolf, V.; Sandman, C.; Zavada.; Chow, P.; Herzog, B. J. Appl.Phys. 2004, 95, 5464.(20) Polman, A. J. Appl. Phys. 1997, 82, 1.(21) Nogales, E.; Garcı´a, J. A.; Méndez, B.; Piqueras, J. Appl. Phys. Lett. 2007, 91, 133108.(22) Voss, T.; Svacha, G. T.; Mu¨ller, S.; Ronning, C.; Konjhodzic, D.; Marlow, F.; Mazur, E. Nano Lett. 2007, 7, 3675.(23) Keavney, D. J.; King, S. T.; Cheung, S. H.; Weinert, M.; Li, L. Phys. ReV. Lett. 2005, 95, 257201.(24) Nogales, E.; García, J. A.; Méndez, B.; Piqueras, J. J. Appl. Phys. 2007, 101, 033517.(25) Molle, A.; Bhuyian, M. N. K.; Tallarida, G.; Fanciulli, M. Appl. Phys. Lett. 2006, 89, 083504.(26) Prabhakaran, K.; Ogino, T. Surf. Sci. 1995, 325, 263. NO © 2009 American Chemical Society.This work has been supported by MEC (Project MAT 2006-01259). The authors are grateful to Dr. Luca Gregoratti at the Sincrotron Trieste for useful advises on XPS measurements. NO MEC DS Docta Complutense RD 29 abr 2024