%0 Journal Article
%A Fernández Sánchez, Paloma
%A Piqueras De Noriega, Francisco Javier
%A Urbieta Quiroga, Ana Irene
%A Rebane, Y. T.
%A Shrete, Y.
%T Deformation-induced defect levels in ZeSe crystals
%D 1999
%@ 0268-1242
%U https://hdl.handle.net/20.500.14352/59136
%X The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an undeformed crystal shows the near-band-edge emission at 2.8 eV and a broad band peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low strain causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-induced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.
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