RT Journal Article
T1 Deformation-induced defect levels in ZeSe crystals
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
A1 Urbieta Quiroga, Ana Irene
A1 Rebane, Y. T.
A1 Shrete, Y.
AB The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an undeformed crystal shows the near-band-edge emission at 2.8 eV and a broad band peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low strain causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-induced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.
PB Iop Publishing Ltd
SN 0268-1242
YR 1999
FD 1999-05
LK https://hdl.handle.net/20.500.14352/59136
UL https://hdl.handle.net/20.500.14352/59136
LA eng
NO © 1999 IOP Publishing Ltd.This work has been supported by DGES (Project PB96-0639). The Russian Fund for Fundamental Studies (Projects 98-01-01084 and 96-01-196825) is also acknowledged.
NO DGES
NO The Russian Fund for Fundamental Studies
DS Docta Complutense
RD 5 abr 2025