RT Journal Article
T1 Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs
A1 Franco Peláez, Francisco Javier
A1 Clemente Barreira, Juan Antonio
A1 Baylac, Maud
A1 Rey, Solenne
A1 Villa, Francesca
A1 Mecha López, Hortensia
A1 Agapito Serrano, Juan Andrés
A1 Puchner, Helmut
A1 Hubert, Guillaume
A1 Velazco, Raoul
AB This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2017
FD 2017-08-01
LK https://hdl.handle.net/20.500.14352/17931
UL https://hdl.handle.net/20.500.14352/17931
LA eng
NO Ministerio de Ciencia e Innovación (MICINN)
NO Universidad Complutense de Madrid - Banco Santander
NO Becas "José Castillejo"
DS Docta Complutense
RD 21 abr 2025