TY  - JOUR
AU  - Dutta, P. S.
AU  - Sreedhar, A. K.
AU  - Bhat, H. L.
AU  - Dubey, G. C.
AU  - Kumar, V.
AU  - Dieguez, E.
AU  - Pal, U.
AU  - Piqueras de Noriega, Javier
PY  - 1996
DO  - 10.1063/1.361220
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59212
T2  - Journal of Applied Physics
AB  - Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly...
LA  - eng
M2  - 3246
PB  - American Institute of Physics
KW  - Optical-Properties
KW  - Gaas
KW  - Cathodoluminescence
KW  - Recombination
KW  - Centers
KW  - Films
KW  - Drift
TI  - Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment
TY  - journal article
VL  - 79
ER  -