RT Journal Article
T1 Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
A1 Volciuc, O.
A1 Popa, V.
A1 Tiginyanu, I. M.
AB Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related emission bands in a 10 mu m wide area around each microstructure. In addition, columnar nanostructures and nanoetch pits were found in the PEC etched areas. CL emission of the nanocolumns is dominated by free electron to acceptor transitions, while excitonic luminescence prevails in the rest of the etched GaN layers. Investigation of the sidewalls of the microstructures reveals that a CL emission band centered at about 3.41 eV, attributed to excitons bound to structural defects, is effectively suppressed after PEC etching only in the observed nanocolumns.
PB American Institute of Physics
SN 0021-8979
YR 2006
FD 2006-07-15
LK https://hdl.handle.net/20.500.14352/51108
UL https://hdl.handle.net/20.500.14352/51108
LA eng
NO © 2006 American Institute of Physics.This work has been supported by MEC through Project No. MAT2003-00455, CAM through Project GR/MAT 630-04, U.S. Civilian Research and Development Foundation under Grant Nos. MR2-995 and MOR2-1033-CH-03, as well as by the Supreme Council for Research and Technological Development of Moldova.
NO MEC
NO CAM
NO U.S. Civilian Research and Development Foundation
NO Supreme Council for Research and Technological Development of Moldova
DS Docta Complutense
RD 10 abr 2025