TY  - JOUR
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras De Noriega, Francisco Javier
AU  - Volciuc, O.
AU  - Popa, V.
AU  - Tiginyanu, I. M.
PY  - 2006
DO  - 10.1063/1.2214210
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51108
T2  - Journal of Applied Physics
AB  - Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra...
LA  - eng
PB  - American Institute of Physics
KW  - Molecular-Beam Epitaxy
KW  - Damage-Induced Masking
KW  - Vapor-Phase-Epitaxy
KW  - Luminescence Properties
KW  - Freestanding Gan
KW  - Photoluminescence
KW  - Defects
KW  - Gallium
KW  - Illumination
KW  - Transitions
TI  - Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
TY  - journal article
VL  - 100
ER  -