RT Journal Article
T1 Fibonacci superlattices of narrow-gap III-V semiconductors
A1 Domínguez-Adame Acosta, Francisco
A1 Maciá Barber, Enrique Alfonso
A1 Méndez Martín, María Bianchi
A1 Roy, C.L.
A1 Khan, A.
AB We report the theoretical electronic structure of Fibonacci superlattices of narrow-gap III-V semiconductors. The electron dynamics is accurately described within the envelope-function approximation in a two-band model. Quasiperiodicity is introduced by considering two different Ill-V semiconductor layers and arranging them according to the Fibonacci series along the growth direction. The resulting energy spectrum is then found by solving exactly the corresponding effective-mass (Dirac-like) wave equation using tranfer-matrix techniques. We find that a self-similar electronic spectrum can be seen in the band structure. Electronic transport properties of samples are also studied and related to the degree of spatial localization of electronic envelope functions via the Landauer resistance and Lyapunov coefficient. As a working example, we consider type II InAs/GaSb superlattices and discuss in detail our results in this system.
PB IOP Publishing LTD
SN 0268-1242
YR 1995
FD 1995-06
LK https://hdl.handle.net/20.500.14352/59029
UL https://hdl.handle.net/20.500.14352/59029
LA eng
NO © 1995 IOP Publishing Ltd.The authors thank A SBnchez for a critical reading of the manuscript. Work at Madrid is supported by CICYT (Spain) under project MAPS-0325. Arif Khan is grateful to CSIR, India, for awarding him a senior research fellowship.
NO CICYT  (España)
DS Docta Complutense
RD 6 abr 2025