RT Journal Article
T1 Resistive switching in manganite/graphene hybrid planar nanostructures
A1 Rocci, Mirko
A1 Tornos Castillo, Javier
A1 Rivera Calzada, Alberto Carlos
A1 Sefrioui, Zouhair
A1 Clement, Marta
A1 Iborra, Enrique
A1 León Yebra, Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
AB We report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La_(0.7)Sr_(0.3)MnO_(3) manganite electrodes grown on SrTiO_(3)(100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts.
PB American Institute of Physics
SN 0003-6951
YR 2014
FD 2014-03-10
LK https://hdl.handle.net/20.500.14352/34777
UL https://hdl.handle.net/20.500.14352/34777
LA eng
NO © 2014 AIP Publishing LLC. We acknowledge financial support by Spanish MICINN through Grants MAT2011-27470-C02 and Consolider Ingenio 2010-CSD2009-00013 (Imagine), by CAM through grant S2009/MAT-1756 (Phama). We thank Patrizia De Marco, Francesco Perrozzi, and Luca Ottaviano for their help and guidance in preparing the graphene samples. We thank Susana Álvarez and Alicia de Andrés for help with preliminary Raman spectroscopy experiments
NO Minsiterio de Ciencia e Innovación (MICINN)
NO Consolider Ingenio 2010
NO Comunidad de Madrid
DS Docta Complutense
RD 7 abr 2025