RT Journal Article T1 Visible cathodoluminescence of Er ions in ß-Ga_2O_3 nanowires and microwires A1 Nogales Díaz, Emilio A1 Méndez Martín, Bianchi A1 Piqueras de Noriega, Javier AB Erbium doped ß-Ga_2O_3 nanowires and microwires have been obtained by a vapour-solid process from an initial mixture of ß-Ga_2O_3 and Er_2O_3 powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as ß-Ga_2O_3 phases in the microwires. Scanning electron microscopy (SEM) images show that the larger microwires have a nearly rectangular cross-section. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of the ß-Ga_2O_3 nanowires. The nanostructures have been studied by means of the cathodoluminescence technique in the scanning electron microscope. Er intraionic blue, green and red emission lines are observed in luminescence spectra even at room temperature, which confirms the optical activity of the rare earth ions in the grown structures. Mapping of the main 555 nm emission intensity shows a non-homogeneous distribution of Er ions in the microstructures. PB Iop Publishing Ltd SN 0957-4484 YR 2008 FD 2008-01-23 LK https://hdl.handle.net/20.500.14352/50939 UL https://hdl.handle.net/20.500.14352/50939 LA eng NO [1] Lieber C M andWang Z L 2007 MRS Bull. 32 99[2] Lu J G, Chang P and Fan Z 2006 Mater. Sci. Eng. R 52 49[3] Tippins H H 1965 Phys. Rev. 140 A316[4] Binet L and Gourier D 1998 J. Phys. Chem. Solids 59 1241[5] Zhang H Z, Kong Y C, Wang Y Z, Du X, Bai Z G, Wang J J, Yu D P, Ding Y, Hang Q L and Feng S Q 1999 Solid State Commun. 109 677[6] Song Y P, Zhang H Z, Lin C, Zhu Y W, Li G H, Yang F H and Yu D P 2004 Phys. Rev. B 69 075304[7] ChoiY C, KimW S, ParkYS, Lee S M, Bae D J, Lee YH, Park G-S, Choi W B, Lee N S and Kim J M 2000 Adv. Mater. 12 746[8] Kim H W 2007 Appl. Phys. A 86 315[9] Nogales E, Méndez B and Piqueras J 2005 Appl. Phys. Lett. 86 113112[10] Nogales E, García J A, Méndez B and Piqueras J 2007 J. Appl. Phys. 101 033517[11] Zhou X T, Heigl F, Ko J Y P, Murphy M W, Zhou J G, Regier T, Blyth R I R and Sham T K 2007 Phys. Rev. B 75 125303[12] Gruber J B, Henderson J R, Muramoto M, Rajnak K and Conway J G 1966 J. Chem. Phys. 45 477[13] Steckl A J and Birkhan R 1998 Appl. Phys. Lett. 73 1700[14] Nogales E, Méndez B, Piqueras J, Plugaru R, Coraci A and García J A 2002 J. Phys. D: Appl. Phys. 35 295[15] Wang K, Martin R W, Nogales E, Edwards P R, O’Donnel K P, Lorenz K, Alves E and Watson I M 2006 Appl. Phys. Lett. 89 131912[16] Favennec P N, Haridon H L, Salvi M, Muotonnet D and Le Guillo Y 1989 Electron. Lett. 25 718[17] Gollakota P, Dhawan A, Wellenius P, Lunardi L M, Muth J F, Saripalli Y N, Peng H Y and Everitt H O 2006 Appl. Phys. Lett. 88 221906[18] Pang M L, Shen W Y and Lin J 2005 J. Appl. Phys. 97 033511[19] Hao J and Cocivera M 2002 J. Phys. D: Appl. Phys. 35 433[20] Grym J, Fern´andez P and Piqueras J 2005 Nanotechnology 16 931[21] Hidalgo P, Méndez B and Piqueras J 2005 Nanotechnology 16 2521[22] Maestre D, Cremades A and Piqueras J 2005 J. Appl. Phys. 97 044316[23] Cui Y, Duan X, Huang Y and Lieber C M 2003 Nanowires and Nanobelts, Materials, Properties vol I, ed Z L Wang (Berlin: Springer) pp 3–65[24] Villora E G, Atou T, Sekiguchi T, Sugawara T, Kikuchi M and Fukuda T 2001 Solid State Commun. 120 455 NO © 2008 IOP Publishing Ltd.This work has been supported by MEC (Project MAT 2003-00455). NO MEC DS Docta Complutense RD 29 abr 2024