%0 Journal Article
%A Mártil de la Plaza, Ignacio
%A García Hemme, Eric
%A García Hernansanz, Rodrigo
%A González Díaz, Germán
%A Olea Ariza, Javier
%A Prado Millán, Álvaro del
%T Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
%D 2012
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/44230
%X We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high Delta G(square), even higher than that measured in a silicon reference sample. This increase in the Delta G(square) magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
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