%0 Journal Article
%A Mártil de la Plaza, Ignacio
%A González Díaz, Germán
%T Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
%D 2002
%@ 0217-9792
%U https://hdl.handle.net/20.500.14352/59097
%X We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.
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