%0 Journal Article
%A Maestre Varea, David
%A Palais, O.
%A Barakel, D.
%A Pasquinelli, M.
%A Alfonso, B.
%A Gourbilleau, F.
%A De Laurentis, M.
%A Irace, A.
%T Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
%D 2010
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/42750
%X SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
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