RT Journal Article
T1 Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
A1 Maestre Varea, David
A1 Palais, O.
A1 Barakel, D.
A1 Pasquinelli, M.
A1 Alfonso, B.
A1 Gourbilleau, F.
A1 De Laurentis, M.
A1 Irace, A.
AB SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
PB American Institute of Physics
SN 0021-8979
YR 2010
FD 2010-03-15
LK https://hdl.handle.net/20.500.14352/42750
UL https://hdl.handle.net/20.500.14352/42750
LA eng
NO © 2010 American Institute of Physics.French authors thank the ANR Solaire Photovoltaïque (National Research Agency) for financial support of this work through the project DUOSIL. We thank also C. Dominici and W. Saikaly from CP2M for their contribution to HTREM observations.A.I. thanks the MIUR for financial support under the FIRB framework
NO ANR Solaire Photovoltaïque (National Research Agency)
DS Docta Complutense
RD 30 dic 2025