%0 Journal Article
%A García, Héctor
%A Castán, Helena
%A Dueñas, Salvador
%A Bailón, Luis
%A García Hernansanz, Rodrigo
%A Olea Ariza, Javier
%A Prado Millán, Álvaro Del
%A Martil De La Plaza, Ignacio
%T Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
%D 2016
%@ 1556-276X
%U https://hdl.handle.net/20.500.14352/24594
%X A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
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