RT Journal Article
T1 Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
A1 García, Héctor
A1 Castán, Helena
A1 Dueñas, Salvador
A1 Bailón, Luis
A1 García Hernansanz, Rodrigo
A1 Olea Ariza, Javier
A1 Prado Millán, Álvaro Del
A1 Martil De La Plaza, Ignacio
AB A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
PB Springer
SN 1556-276X
YR 2016
FD 2016-07-16
LK https://hdl.handle.net/20.500.14352/24594
UL https://hdl.handle.net/20.500.14352/24594
LA eng
NO © 2016 The Author(s). The study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R and TEC2013-41730-R, funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid.
NO Spanish TEC2014 Ministerio de Economía y Competitividad
NO Comunidad de Madrid, Spain
DS Docta Complutense
RD 6 abr 2025