TY  - JOUR
AU  - Pampillón, María Ángela
AU  - Feijoo, Pedro Carlos
AU  - San Andrés Serrano, Enrique
PY  - 2013
SN  - 0167-9317
UR  - https://hdl.handle.net/20.500.14352/98120.2
T2  - Microelectronic Engineering
AB  - In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in situ plasma oxidation of the...
LA  - eng
M2  - 236
PB  - Elsevier
KW  - Plasma oxidation
KW  - High pressure sputtering
KW  - Gadolinium oxide
KW  - High-k dielectric
TI  - Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
TY  - journal article
VL  - 109
ER  -