RT Journal Article
T1 Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors
A1 Malyshev, Andrey
A1 Merkulov, I. A.
A1 Rodina, A. V.
AB An approach to the theory of the acceptor ground state in cubic semiconductors is presented. The model has been developed within the framework of the four-band effective Luttinger Hamiltonian and is applicable for both Coulomb and non-Coulomb accepters. The system of integral equations for the ground-state wave functions has been derived and its solution has been numerically computed. We present the general form of the acceptor-ground-state wave function. The wave functions for a set of acceptor dopants in GaAs are calculated with an accuracy of 2%. The obtained wave functions have been used for qualitative and quantitative analysis of the hot photoluminescence (HPL) spectra and linear polarization in GaAs crystals. Analytical expressions for the line shape and anisotropy of the linear polarization degree have been derived. The dependencies of the HPL characteristics on the excitation energy as well as on the acceptor binding energy have been analyzed. The HPL theory presented allows us to describe the wide spectrum of available experimental data.
PB American Physical Society
SN 0163-1829
YR 1997
FD 1997-02-15
LK https://hdl.handle.net/20.500.14352/60231
UL https://hdl.handle.net/20.500.14352/60231
LA eng
NO © 1997 The American Physical Society.We would like to thank B.P. Zacharchenya, V.I. Perel’, D.N. Mirlin, and I.I. Reshina for helpful discussions. The research described in this publication was made possible in part by Grant No. JF2100 from International Science Foundation and Russian Government and by Grant No. 950204055 from Russian Foundation of Fundamental Investigation.
NO International Science Foundation and Russian Government
NO Russian Foundation of Fundamental Investigation
DS Docta Complutense
RD 11 abr 2025