TY  - JOUR
AU  - Castaldini, A.
AU  - Cavallini, A.
AU  - Polenta, L.
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2002
DO  - 10.1016/S0921-5107(01)01051-0
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/59112
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitride,...
LA  - eng
M2  - 308
PB  - Elsevier Science Sa
KW  - Molecular-Beam Epitaxy
KW  - Doped Gan
KW  - Photoluminescence
KW  - Films
KW  - Luminescence
KW  - Mg
KW  - Cathodoluminescence
KW  - Spectroscopy
KW  - Emission
TI  - Characterization of thin layers of n- and p-type GaN
TY  - journal article
VL  - 91
ER  -