TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - García Hemme, Eric
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - Prado Millán, Álvaro Del
PY  - 2011
DO  - 10.1088/0268-1242/26/11/115003
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/44233
T2  - Semiconductor Science and Technology
AB  - We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain...
LA  - eng
PB  - Iop Publishing Ltd
KW  - Amorphous-Silicon
KW  - Doped Silicon
KW  - Temperature.
TI  - UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
TY  - journal article
VL  - 26
ER  -