%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Olea Ariza, Javier
%T Titanium doped silicon layers with very high concentration
%D 2008
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/51100
%X Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.
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