RT Journal Article
T1 Titanium doped silicon layers with very high concentration
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Olea Ariza, Javier
AB Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.
PB American Institute of Physics
SN 0021-8979
YR 2008
FD 2008-07-01
LK https://hdl.handle.net/20.500.14352/51100
UL https://hdl.handle.net/20.500.14352/51100
LA eng
NO © 2008 American Institute of Physics. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo CACTI for SIMS measurements, the Center for Microanalysis of Materials of the Universidad Autónoma de Madrid for RBS measurements, CAI de difracción de rayos X of the Universidad Complutense de Madrid for GIXRD measurements, and CAI de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was made possible thanks to the FPI (Grant No. BES-2005-7063) of the Spanish Ministry of Education and Science. This work was partially supported by the Project NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid and Project GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program.
NO FPI of the Spanish Ministry of Education and Science
NO Comunidad de Madrid
NO Spanish Consolider National Program
DS Docta Complutense
RD 13 abr 2025