TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2008
DO  - 10.1063/1.2949258
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51100
T2  - Journal of Applied Physics
AB  - Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at...
LA  - eng
PB  - American Institute of Physics
TI  - Titanium doped silicon layers with very high concentration
TY  - journal article
VL  - 104
ER  -