RT Journal Article
T1 Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
A1 Dhar, S.
A1 Pérez García, Lucas
A1 Brandt, O.
A1 Trampert, A.
A1 Ploog, K. H.
A1 Keller, J.
A1 Beschoten, B.
AB We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The structural properties of these layers are found to be identical to those of undoped GaN layers. However, the magnetic characterization reveals an unprecedented effect. The average value of the magnetic moment per Gd atom is found to be as high as 4000 μ_(b) as compared to its atomic moment of 8 μ_(b). Such a colossal magnetic moment can be explained in terms of a long range spin polarization of the GaN matrix by the Gd atoms which is reflected by the circular polarization of magnetophotoluminescence measurements. Moreover, the material system is found to exhibit ferromagnetism well above room temperature in the entire concentration range under investigation. We propose a phenomenological model to understand the macroscopic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd. D
PB American Physical Society
SN 1098-0121
YR 2005
FD 2005-12
LK https://hdl.handle.net/20.500.14352/52144
UL https://hdl.handle.net/20.500.14352/52144
LA eng
NO © The American Physical Society.We thank M. Ramsteiner, U. Jahn, and K. J. Friedland for important contributions to this work and V. F. Sapega, J. Herfort, M. Bowen, and R. Koch for valuable discussions and suggestions. We also acknowledge partial financial support of this work by the Bundesministerium für Bildung und Forschung of the Federal Republic of Germany. One of us (L.P.) thanks the Alexander von Humboldt Foundation, Germany for financial support.
NO Bundesministerium für Bildung und Forschung of the Federal Republic of Germany
NO Alexander von Humboldt Foundation, Germany
DS Docta Complutense
RD 29 abr 2024