TY  - JOUR
AU  - Dhar, S.
AU  - Pérez García, Lucas
AU  - Brandt, O.
AU  - Trampert, A.
AU  - Ploog, K. H.
AU  - Keller, J.
AU  - Beschoten, B.
PY  - 2005
DO  - 10.1103/PhysRevB.72.245203
SN  - 1098-0121
UR  - https://hdl.handle.net/20.500.14352/52144
T2  - Physical review B
AB  - We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The...
LA  - eng
PB  - American Physical Society
KW  - Molecular-beam epitaxy
KW  - Exchange interactions
KW  - Layers
KW  - 6H-SiC(0001)
KW  - Palladium
TI  - Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
TY  - journal article
VL  - 72
ER  -