RT Journal Article
T1 Luminescence properties of transition-metal-doped GaSb
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Dutta, P: S.
A1 Piqueras De Noriega, Francisco Javier
A1 Dieguez, E.
AB The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.
PB American Physical Society
SN 0163-1829
YR 1998
FD 1998-03-15
LK https://hdl.handle.net/20.500.14352/58950
UL https://hdl.handle.net/20.500.14352/58950
LA eng
NO © The American Physical Society.This Work Was Supported By The DGICYT (Project No. PB93-1256) And CICYT (Project No. 95-0086-OP).
NO DGICYT
NO CICYT
DS Docta Complutense
RD 5 abr 2025