RT Journal Article
T1 In-doped gallium oxide micro- and nanostructures: morphology, structure, and luminescence properties
A1 Lopez, Inaki
A1 Utrilla, Antonio D.
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Peche, Andrea
A1 Ramírez Castellanos, Julio
A1 González Calbet, José María
AB The influence of indium doping on morphology, structural, and luminescence properties of gallium oxide micro- and nanostructures is reported. Indium-doped gallium oxide micro- and nanostructures have been grown by thermal oxidation of metallic gallium in the presence of indium oxide. The dominant morphologies are beltlike structures, which in many cases are twisted leading to springlike structures, showing that In diffusion in Ga2O3 influences the microstructure shapes. High-resolution transmission electron microscopy has revealed the presence of twins in the belts, and energy-dispersive X-ray spectroscopy in the scanning electron microscopy (SEM) has detected a segregation of indium impurities at the edges of planar structures. These results suggest that indium plays a major role in the observed morphologies and support the assumption of a layer by layer model as growth mechanism. An additional assessment of indium influence on the defect structure has been performed by cathodoluminescence in the SEM, X-ray photoelectron microscopy, and spatially resolved Raman spectroscopy.
PB Amer Chemical Soc
SN 1932-7447
YR 2012
FD 2012-02-16
LK https://hdl.handle.net/20.500.14352/44056
UL https://hdl.handle.net/20.500.14352/44056
LA eng
NO © 2012 American Chemical Society.This work has been supported by MICINN through projects MAT2009-07882 and CSD2009-0013 and by BSCH-CM(Project GR35-10A-910146). The authors are grateful to Dr. Luca Gregoratti at the Sincrotron Trieste for useful advises on XPS measurements.
NO MICINN
NO BSCH-UCM
DS Docta Complutense
RD 7 abr 2025