%0 Book Section
%T Influence of defects on diffusion length inhomogeneity in gaas-te wafers
publisher IOP Publishing LTD
%D 1994
%U 0-7503-0294-1
%@ https://hdl.handle.net/20.500.14352/60828
%X Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N-D-N-A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.
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