RT Book, Section
T1 Influence of defects on diffusion length inhomogeneity in gaas-te wafers
A1 Castaldini, A.
A1 Cavallini, A.
A1 Fraboni, B
A1 Piqueras de Noriega, Javier
A1 Méndez Martín, Bianchi
AB Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N-D-N-A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.
PB IOP Publishing LTD
SN 0-7503-0294-1
YR 1994
FD 1994
LK https://hdl.handle.net/20.500.14352/60828
UL https://hdl.handle.net/20.500.14352/60828
NO © IOP Publishing LTD.International Conference on Defect Recognition and Image Processing in Semiconductors and Devices (5. 1993. Santander)
DS Docta Complutense
RD 20 may 2024